Autor: |
Olga V. Shepovalova, Vladimir M. Evdokimov, Yuri D. Arbuzov |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
AIP Conference Proceedings. |
ISSN: |
0094-243X |
DOI: |
10.1063/1.4976294 |
Popis: |
High voltage cascade solar cells on the basis of n+-p-p+(t)n+-p-p+(t)…n+-p-p+ multilayer structures manufactured from homogeneous type semiconductor with the quantum mechanical tunnelling effect of charge carriers in p+(t)n+ junction under concentrated radiation have been studied. The expressions for the theoretical and physical upper-limit values for open circuit voltage and efficiency of cascade solar cell and spectral characteristics, design and physical parameters of cascades have been obtained. Dependencies of the upper-limit efficiency for silicon cascade photovoltaic converters on solar radiation concentration ratio, number of cells and dead layer thickness in cascade tunnel-junction structures have been investigated. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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