Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures
| Autor: | M. Tapajna, U. Weber, O. Boissière, G. Barbar, C. Manke, J. Lindner, P. K. Baumann, Karol Fröhlich |
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| Rok vydání: | 2006 |
| Předmět: |
Chemistry
Analytical chemistry Nanotechnology Chemical vapor deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Ruthenium oxide Surfaces Coatings and Films Electronic Optical and Magnetic Materials Trench Surface roughness Deposition (phase transition) Wafer Electrical and Electronic Engineering Thin film Sheet resistance |
| Zdroj: | Microelectronic Engineering. 83:2277-2281 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2006.10.018 |
| Popis: | Using beta-diketonate Ru precursors diluted in n-octane Ru and RuO"2 layers were grown on plane 200nm SiO"2/Si wafers by atomic vapor deposition (AVD^(R)). AVD^(R) was carried out in an AIXTRON Tricent^(R) system using liquid delivery of the ruthenium precursor. The deposited multi-crystalline smooth (RMS surface roughness |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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