Influence of Supply Voltage and Body Biasing on Single-Event Upsets and Single-Event Transients in UTBB FD-SOI

Autor:	Philippe Roche, Jean-Luc Autran, Capucine Lecat-Mathieu de Boissac, Fady Abouzeid, Victor Malherbe, Gilles Gasiot
Rok vydání:	2021
Předmět:	Nuclear and High Energy Physics Materials science business.industry Spice Silicon on insulator Biasing FBB Upset Nuclear Energy and Engineering Optoelectronics Transient (oscillation) Sensitivity (control systems) Electrical and Electronic Engineering business Voltage
Zdroj:	IEEE Transactions on Nuclear Science. 68:850-856
ISSN:	1558-1578 0018-9499
Popis:	In this article, we present the effects of voltage scaling and forward body biasing (FBB) on single-event effect sensitivity of a 28-nm ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology. Heavy-ion irradiation was performed for single-event upset (SEU) and single-event transient (SET) sensitivity assessment on characterization test chips under three supply voltages, with and without back-gate voltage application. Measurements show a steady SEU sensitivity for any supply voltage across the two FBB configurations, whereas SET sensitivity is diminished under FBB. SPICE and TCAD mixed-mode simulations were run to assess the contribution of electrical factors as well as charge extraction mechanisms. While drive strength is increased under FBB, the bipolar amplification plays an important role in sensitivity at low linear energy transfers (LETs).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::876855c93feb198ef74420b4006cb63c https://doi.org/10.1109/tns.2021.3071963 Zobrazit plný text záznamu