Temperature dependence of minority‐carrier mobility and recombination time in p‐type GaAs
| Autor: | S. L. Wright, Kwyro Lee, K. Wrenner, K. Beyzavi, M. I. Nathan, Dm Kim |
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| Rok vydání: | 1991 |
| Předmět: |
Electron mobility
Physics and Astronomy (miscellaneous) Condensed matter physics Heterostructure-emitter bipolar transistor Chemistry Electrical resistivity and conductivity Heterojunction bipolar transistor Doping Bipolar junction transistor Induced high electron mobility transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Cutoff frequency |
| Zdroj: | Applied Physics Letters. 58:1268-1270 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.104332 |
| Popis: | The electron mobility in p‐type GaAs, μpe, has been determined as a function of temperature by measuring the common‐emitter cutoff frequency, fT, of an AlGaAs/GaAs n‐p‐n heterojunction bipolar transistor. The base was 0.6 μm thick and it was doped with 4×1018 cm−3 Be. The 300 K value of 1055 cm2/V s and 79 K value of 5000 cm2/V s for μpe are comparable to the previously measured values. The discrepancy with the calculated values is pointed out. The recombination lifetime is also measured as a function of temperature for minority carriers. The results agree reasonably well with the calculated radiative recominbation time. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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