InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers
| Autor: | Milan Pophristic, D. I. Florescu, Jinhyun Lee, Shiping Guo, Dong-Seung Lee, Marek Osinski, Petr G. Eliseev |
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| Rok vydání: | 2003 |
| Předmět: |
Photoluminescence
Materials science business.industry Wide-bandgap semiconductor Heterojunction Electroluminescence medicine.disease_cause Atomic and Molecular Physics and Optics Sapphire medicine Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Quantum well Ultraviolet |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 9:1239-1245 |
| ISSN: | 1077-260X |
| Popis: | Nitride-based ultraviolet (UV) heterostructures with InGaN quantum wells and AlInGaN barrier layers have been grown by metal-organic chemical vapor deposition on sapphire substrates. The emission band was at 3.307 eV (375 nm) at room temperature (RT) and its full-width at half-maximum was /spl sim/82meV. In addition to the UV band, some blue emission admixture was found in a single-quantum-well (SQW) structure, which the authors attribute to recombination of injected electrons that are not captured into the SQW and enter the p-side of the structure. The authors demonstrate a significant advantage in utilizing multiple-quantum-well (MQW) structures that provide a more effective capture of injected carriers into wells and predominance of UV emission. Temperature-sensitive competition between two emission mechanisms in MQW structures has been observed. Below /spl sim/170 K, the blue impurity-related emission dominated. In the 170-190 K range, an anomalous temperature-induced "blue jump" by over /spl sim/340 meV to UV region occurred, with UV emission dominating above 190 K. |
| Databáze: | OpenAIRE |
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