| Autor: |
A.A. Lakhani, V.K.R. Nair, O.A. Aina, K.P. Pande, J.M. O'Connor |
| Rok vydání: |
1984 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices. 31:506-508 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/t-ed.1984.21557 |
| Popis: |
A simple capless annealing technique for post-implantation annealing of a GaAs wafer is described. The technique incorporates a novel boat design and uses InAs as the source of arsenic overpressure. Using this technique, wafers annealed at 850°C show mobilities in the range of 4000 cm2. V-1. S-1with over 85-percent activation for a Si dose of 5 \times 10^{12} cm-2. Dopant depth profiles with peak donor densities of 2 \times 10^{17} cm-3and minimal tailing were demonstrated. Electron channeling data show that crystallinity is fully restored during the anneal. 1-µm gate length MESFET's processed on n+-n implanted layers exhibited g_{m} \geq 160 mS/mm and pinchoff voltages in the range of 3 V. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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