Diamond deposition on Si (111) and carbon face 6HSiC (0001) substrates by positively biased pretreatment
| Autor: | Li Chang, Te Fu Chang |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Scanning electron microscope Mechanical Engineering Analytical chemistry chemistry.chemical_element Diamond Mineralogy Biasing Heterojunction General Chemistry engineering.material Electronic Optical and Magnetic Materials Carbon film chemistry Plasma-enhanced chemical vapor deposition Transmission electron microscopy Materials Chemistry engineering Electrical and Electronic Engineering Carbon |
| Zdroj: | Diamond and Related Materials. 11:509-512 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(01)00672-0 |
| Popis: | The growth of textured diamond films on Si (111) and carbon face 6HSiC (0001) has been achieved by positive bias-enhanced-nucleation in microwave plasma chemical vapor deposition. A bias voltage of +100 to +300 V, 3% CH4 concentration in bias step, and 0.33% CH4 concentration in growth step were used to synthesize diamond films on Si and carbon face 6HSiC. Highly oriented diamond films were observed by scanning electron microscopy and X-ray diffraction patterns. Cross-sectional transmission electron microscopy showed that the interface between diamond and Si substrate was smooth, while it was rough between diamond and SiC. It also showed that diamond films were directly grown on both substrates. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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