Biaxial strain effects on the electronic properties of silicene: the density-functional-theory-based calculations
| Autor: | Khaerul Umam, Moh. Adhib Ulil Absor, Sholihun, Ari Dwi Nugraheni, Romy H. S. Budhi, Pekik Nurwantoro |
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| Rok vydání: | 2018 |
| Předmět: |
History
Materials science Condensed matter physics Strain (chemistry) Silicene Doping Fermi level Fermi energy 02 engineering and technology Electronic structure 021001 nanoscience & nanotechnology 01 natural sciences Computer Science Applications Education Condensed Matter::Materials Science symbols.namesake 0103 physical sciences Ultimate tensile strength symbols Density functional theory 010306 general physics 0210 nano-technology |
| Zdroj: | Journal of Physics: Conference Series. 1011:012074 |
| ISSN: | 1742-6596 1742-6588 |
| DOI: | 10.1088/1742-6596/1011/1/012074 |
| Popis: | The effects of biaxial strain on the electronic properties of silicene are studied by carrying out the density-functional-theory (DFT) calculations. We simulate planar and buckled structures and find that the buckled structure is more stable than the planar one. We next apply biaxial strain up to 12% and find that the applied tensile and compressive strains below 8% do not change the electronic structure. At tensile strains of 8% or more, the Dirac point at K-point shifts up from the Fermi level, indicating that such tensile strain behaves as p-type doping. Meanwhile at the compressive strains of 8% or more, the Dirac point at K-point shifts down from the Fermi level, indicating that the such compressive strain behaves as n-type doping. We find that silicene remains stable for the applied strain up to 12%. We also calculate the Fermi velocity around K-point, which is found to be 9.1 × 105 m/s. |
| Databáze: | OpenAIRE |
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