Is interfacial silicon carbide necessary for the epitaxy of diamond on (100) silicon?
| Autor: | M.G. Jubber, J. I. B. Wilson, Phillip John, David Milne |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Silicon business.industry Process Chemistry and Technology Nanocrystalline silicon chemistry.chemical_element Diamond Surfaces and Interfaces General Chemistry engineering.material Epitaxy Micropipe Monocrystalline silicon chemistry.chemical_compound chemistry Silicon carbide engineering Optoelectronics LOCOS business |
| Zdroj: | Chemical Vapor Deposition. 3:30-33 |
| ISSN: | 1521-3862 0948-1907 |
| DOI: | 10.1002/cvde.19970030104 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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