Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters

Autor:	O. Yu. Sabitov, N. T. Gurin, A. M. Afanas’ev
Rok vydání:	2010
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Fermi level Electron Electroluminescence Cathode law.invention symbols.namesake Semiconductor law symbols Atomic physics business Quantum tunnelling Common emitter Surface states
Zdroj:	Technical Physics Letters. 36:26-30
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785010010098
Popis:	The energy distribution of the density of occupied surface states (Nss) at the cathode insulatorphosphor interface in ZnS:Mn electroluminescent thin-film (ELTF) emitters has been modeled on the basis of experimental data. Changes in this distribution depending on the parameters of exciting voltage pulses have been studied. It is established that the energy distribution of Nss shifts toward deeper levels upon a decrease in the frequency of the exciting signal and the resulting increase in the pause between the adjacent switch-on states. This behavior corresponds to a cascade relaxation mechanism of electrons trapped on the surface states. Maximum values of the Nss (∼2.5 × 1013 cm−2) and the specific density of surface states per unit energy (2 × 1014–1015 cm−2 eV−1) are determined for the cathode insulator-phosphor interface from which electrons are tunneling. Positions of the equilibrium (∼1.25 eV below the conduction-band bottom) and the quasi-equilibrium (0.6–1.25 eV) Fermi levels during the ELTF emitter operation are estimated.
Databáze:	OpenAIRE
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