Diamond Diode Structures Based on Homoepitaxial Films
| Autor: | Sergey A. Malykhin, N. B. Rodionov, A. F. Pal, I. V. Altukhov, S. K. Paprotskiy, Andrey Bolshakov, V. G. Ralchenko, V. A. Dravin, Miron S. Kagan, R.A. Khmelnitskiy |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
chemistry.chemical_element 02 engineering and technology engineering.material Epitaxy 01 natural sciences Ionizing radiation 0103 physical sciences Electronics Electrical and Electronic Engineering Diode 010302 applied physics Radiation business.industry Doping Diamond 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry engineering Optoelectronics 0210 nano-technology Luminescence business Platinum |
| Zdroj: | Journal of Communications Technology and Electronics. 63:828-834 |
| ISSN: | 1555-6557 1064-2269 |
| Popis: | (m–i–p)-Structures with high-resistance epitaxial i-layers are fabricated on heavily doped p+-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (C–V and I–V characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (m–i–p)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices). |
| Databáze: | OpenAIRE |
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