| Autor: |
A.O. Sofiienko, B.V. Kozhushko, V.Ya. Degoda, M.S. Brodyn, V.T. Vesna |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
Radiation Measurements. 65:36-44 |
| ISSN: |
1350-4487 |
| Popis: |
This work presents an analysis of the main requirements for semiconductor detectors of ionising radiation that can be operated over a wide temperature range. The analysis shows that wide-gap semiconductors with a band gap greater than 2.0 eV are a better option for effective detection of ionising radiation at high temperatures. The results of an experimental investigation into the luminescent, electrical and spectrometric properties of the wide-gap semiconductor ZnSe are shown as an example. Undoped monocrystalline ZnSe has an extremely low leakage current over a wide range of temperatures up to 167 °C and can be used as a radiometric X-ray detector in pulse-counting mode over a wide temperature range up to at least 130 °C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect