Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions
| Autor: | Dmitry Roshchupkin, Yu. A. Agafonov, T.G. Yugova, V.I. Zinenko, V.S. Avrutin, V. I. Vdovin, Dmitry Irzhak, N.F. Izyumskaya, A.F. Vyatkin, E. A. Steinman |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon Condensed matter physics Annealing (metallurgy) chemistry.chemical_element Heterojunction Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Condensed Matter::Materials Science Crystallography Ion implantation chemistry Magnet Irradiation |
| Zdroj: | Semiconductors. 38:313-318 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1682335 |
| Popis: | Pseudomorphic Si0.76Ge0.24/Si heterostructures grown by molecular-beam epitaxy were irradiated with 350-keV Ge+ ions at a temperature of 400°C so that the peak of the ions’ energy losses was located within the silicon substrate (deeper than the SiGe-Si interface). The effect of ion implantation on the relaxation of elastic stresses and the defect structure formed as a result of postimplantation annealing is studied. It is found that annealing at a temperature even as low as 600°C makes it possible to ensure a very high degree of relaxation of elastic stresses in the heterostructure and a comparatively low density of threading dislocations in the SiGe layer ( |
| Databáze: | OpenAIRE |
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