Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride
| Autor: | Dan Jiadong, Sherman Jun Rong Tan, Sock Mui Poh, Stephen J. Pennycook, Wu Zhou, Deyi Fu, Leiqiang Chu, Xiaoxu Zhao, Wenwen Fei, Kian Ping Loh, Antonio H. Castro Neto |
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| Rok vydání: | 2018 |
| Předmět: |
Electron mobility
Materials science business.industry General Engineering General Physics and Astronomy 02 engineering and technology Substrate (electronics) Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Scanning transmission electron microscopy Molybdenum diselenide Optoelectronics General Materials Science Grain boundary Field-effect transistor 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | ACS Nano. 12:7562-7570 |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | Molybdenum diselenide (MoSe2) is a promising two-dimensional material for next-generation electronics and optoelectronics. However, its application has been hindered by a lack of large-scale synthesis. Although chemical vapor deposition (CVD) using laboratory furnaces has been applied to grow two-dimensional (2D) MoSe2 cystals, no continuous film over macroscopically large area has been produced due to the lack of uniform control in these systems. Here, we investigate the molecular beam epitaxy (MBE) of 2D MoSe2 on hexagonal boron nitride (hBN) substrate, where highly crystalline MoSe2 film can be grown with electron mobility ∼15 cm2/(V s). Scanning transmission electron microscopy (STEM) shows that MoSe2 grains grown at an optimum temperature of 500 °C are highly oriented and coalesced to form continuous film with predominantly mirror twin boundaries. Our work suggests that van der Waals epitaxy of 2D materials is tolerant of lattice mismatch but is facilitated by substrates with similar symmetry. |
| Databáze: | OpenAIRE |
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