| Autor: |
C. Trinh, N. Shibata, T. Nakano, M. Ogawa, J. Sato, Y. Takeyama, K. Isobe, B. Le, F. Moogat, N. Mokhlesi, K. Kozakai, P. Hong, T. Kamei, K. Iwasa, J. Nakai, T. Shimizu, M. Honma, S. Sakai, T. Kawaai, S. Hoshi, J. Yuh, C. Hsu, T. Tseng, J. Li, J. Hu, M. Liu, S. Khalid, J. Chen, M. Watanabe, H. Lin, J. Yang, K. McKay, K. Nguyen, T. Pham, Y. Matsuda, K. Nakamura, K. Kanebako, S. Yoshikawa, W. Igarashi, A. Inoue, T. Takahashi, Y. Komatsu, C. Suzuki, K. Kanazawa, M. Higashitani, S. Lee, T. Murai, J. Lan, S. Huynh, M. Murin, M. Shlick, M. Lasser, R. Cernea, M. Mofidi, K. Schuegraf, K. Quader |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
ISSCC |
| DOI: |
10.1109/isscc.2009.4977400 |
| Popis: |
Today NAND Flash memory is used for data and code storage in digital cameras, USB devices, cell phones, camcorders, and solid-state disk drives. Figure 13.6.1 shows the memory-density trend since 2003. To satisfy the market demand for lower cost per bit and higher density nonvolatile memory, in addition to technology scaling, 2b/cell MLC technology was introduced. Recently, MLC NAND flash memories with more than 2b/cell [1,2] have been reported. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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