Dynamic Behavior of a Medium-Voltage N -Channel SiC-IGBT With Ultrafast Switching Performance of 300 kV/μs
| Autor: | Yoshiyuki Yonezawa, Tomonori Mizushima, Hiroshi Yamaguchi, Shinichiro Matsunaga, Yuji Iizuka, Kunio Koseki |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences Capacitance Optical switch Industrial and Manufacturing Engineering Switching time chemistry.chemical_compound 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Silicon carbide Electrical and Electronic Engineering 010302 applied physics business.industry 020208 electrical & electronic engineering Insulated-gate bipolar transistor chemistry Control and Systems Engineering Power module Logic gate Optoelectronics business Hardware_LOGICDESIGN Voltage |
| Zdroj: | IEEE Transactions on Industry Applications. 54:3558-3565 |
| ISSN: | 1939-9367 0093-9994 |
| DOI: | 10.1109/tia.2018.2824247 |
| Popis: | An n -channel silicon carbide (SiC) insulated gate bipolar transistor with a reverse blocking voltage of 16 kV was fabricated on a 4H-SiC carbon face. A double-pulse test with a dc-bus voltage of 5 kV and an inductive load was conducted to observe the dynamic behavior. It was found that the separation of the current-path for the gate driving circuit from the main circuit is essential to secure a stable operation. The new power module, with a gate driving circuit isolated from the main circuit and ultrafast switching speed of 303 kV/μs, has been successfully developed. Moreover, an extremely low switching loss of 3 mJ was measured for turn-on and 3.6 mJ for turn-off. The benefits of an increase in switching speed together with a reduction in switching losses were also experimentally confirmed. |
| Databáze: | OpenAIRE |
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