Solubility of magnesium in silicon
| Autor: | null Astrov Yu. A., null Portsel L. M., null Lodygin A. N., null Abrosimov N. V., null Yakovleva A. A., null Lavrentiev A. A., null Shuman V. B. |
|---|---|
| Rok vydání: | 2022 |
| Zdroj: | Semiconductors. 56:642 |
| ISSN: | 1726-7315 |
| Popis: | The solubility of impurity magnesium, which was introduced by diffusion in the temperature range of 1100-1300oC in silicon, is studied by secondary-ion mass spectrometry. It is demonstrated that, with the electrically inactive impurity component taken into account, the maximum solubility of magnesium in silicon is 1-2 orders of magnitude lower (and the diffusion coefficient is higher) than the values reported earlier. Keywords: silicon, doping, magnesium impurity, solubility. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|