Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy
| Autor: | Wei Wang, Yee-Chia Yeo, Vijay Richard D'Costa |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Band gap General Physics and Astronomy 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Critical point (mathematics) Molecular beam epitaxial growth Ellipsometry 0103 physical sciences Spectroscopic ellipsometry Dielectric function 0210 nano-technology Molecular beam epitaxy |
| Zdroj: | Journal of Applied Physics. 120:063104 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.4960449 |
| Popis: | We investigated the compositional dependence of the near-bandgap dielectric function and the E0 critical point in pseudomorphic Ge1-xSnx alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E1 and E1+Δ1 transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys. |
| Databáze: | OpenAIRE |
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