Photoluminescence characterization of GaTe single crystals

Autor:	Hasan Efeoglu, B. Abay, Y.K. Yoğurtçu, H.S. Güder
Rok vydání:	2001
Předmět:	Photoluminescence Chemistry C band Exciton Biophysics General Chemistry B band Condensed Matter Physics Biochemistry Atomic and Molecular Physics and Optics Characterization (materials science) Spontaneous emission Atomic physics Intensity (heat transfer) Excitation
Zdroj:	Journal of Luminescence. 93:243-248
ISSN:	0022-2313
DOI:	10.1016/s0022-2313(01)00192-2
Popis:	Radiative recombination mechanisms in GaTe single crystals have been investigated as a function of temperature and excitation laser intensity in the energy region of 1.5–1.8 eV. Three emission bands have been observed located at 1.781 (A band), 1.735 (B band) and 1.575 eV (C band) at 10 K. A and B bands have been found to be strongly dependent on temperature while C band has been weakly dependent. The radiative recombination mechanisms of the A, B and C bands have been associated with the direct free exciton, bound-exciton and donor–acceptor pair (DAP) transitions from the temperature and excitation intensity dependencies of the PL intensities and peak energies of the emission bands.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::86de18f90a6f150d2f941e9fbbe10de8 https://doi.org/10.1016/s0022-2313(01)00192-2 Zobrazit plný text záznamu Full Text from ScienceDirect