Pt vias for high temperature MEMS interconnects

Autor:	Christopher Gregory, David Dausch, Robert Rhoades
Rok vydání:	2010
Předmět:	Microelectromechanical systems Interconnection Materials science Fabrication Silicon Annealing (metallurgy) business.industry chemistry.chemical_element chemistry Chemical-mechanical planarization Electronic engineering Optoelectronics Wafer Electroplating business
Zdroj:	2010 IEEE International Interconnect Technology Conference.
Popis:	A process sequence has been developed and characterized to fabricate interconnect structures in MEMS devices capable of withstanding thermal cycles up to at least 700°C. Via test structures with 3–7 µm diameter and 5–10 µm depth were etched in thermally oxidized silicon wafers and filled with platinum (Pt). Key enabling process steps were Pt electroplating and Pt CMP as reported herein. Target applications include piezoelectric MEMS or other devices requiring high temperature processing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::86d9f439b4b75cf25b5f04ac14fb5421 https://doi.org/10.1109/iitc.2010.5510316 Zobrazit plný text záznamu