FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics
Autor: | Nisha Checka, Steven A. Vitale, Craig L. Keast, Jakub Kedzierski, Peter W. Wyatt |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | Proceedings of the IEEE. 98:333-342 |
ISSN: | 1558-2256 0018-9219 |
Popis: | Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate. |
Databáze: | OpenAIRE |
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