FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics

Autor:	Nisha Checka, Steven A. Vitale, Craig L. Keast, Jakub Kedzierski, Peter W. Wyatt
Rok vydání:	2010
Předmět:	Engineering business.industry Subthreshold conduction Transistor Electrical engineering Silicon on insulator law.invention law Logic gate Power electronics Low-power electronics Hardware_INTEGRATEDCIRCUITS Electronic engineering Electronics Electrical and Electronic Engineering business Metal gate
Zdroj:	Proceedings of the IEEE. 98:333-342
ISSN:	1558-2256 0018-9219
Popis:	Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::86d5099a99951bf87130dc07c1d8dacd https://doi.org/10.1109/jproc.2009.2034476 Zobrazit plný text záznamu