Investigation of the dependence of the radiative properties of cadmium sulfide single crystals on the equilibrium carrier density
| Autor: | V M Leonov, O N Talenskiĭ, Yurii M Popov, A V Dudenkova, P V Shapkin, L I Borovich |
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| Rok vydání: | 1978 |
| Předmět: |
Materials science
Photoluminescence General Engineering Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Semiconductor laser theory Condensed Matter::Materials Science Excited state Spontaneous emission Charge carrier Stimulated emission Atomic physics Luminescence Current density |
| Zdroj: | Soviet Journal of Quantum Electronics. 8:369-371 |
| ISSN: | 0049-1748 |
| DOI: | 10.1070/qe1978v008n03abeh010023 |
| Popis: | An investigation was made of the photoluminescence spectra (T=77°K) of CdS crystals as a function of the equilibrium carrier density n=1013–1018cm−3. The effective optical gain and the threshold current density were determined at T=85°K when the same crystals were excited by an electron beam. The highest gain, amounting to 70–100 cm−1 (corresponding to j=1 A/cm2), and the lowest threshold current density were recorded for undoped crystals (n=1013–1014cm−3), whose photoluminescence spectra included the line due to free A excitons and the luminescence resulting from the recombination of these excitons accompanied by the emission of one or two longitudinal optical phonons. The results indicated that CdS crystals with n>5×1016cm−3 were unsuitable as the active material for electron-beam-excited lasers. |
| Databáze: | OpenAIRE |
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