Temperature and well number dependence of exciton localization in InGaN/GaN quantum wells
| Autor: | R Pecharromán-Gallego |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Condensed Matter::Quantum Gases
Photoluminescence Indium nitride Condensed matter physics Condensed Matter::Other Phonon Exciton Gallium nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound chemistry Materials Chemistry Electrical and Electronic Engineering Spectroscopy Biexciton Quantum well |
| Zdroj: | Semiconductor Science and Technology. 22:1276-1281 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/22/12/006 |
| Popis: | An analysis of the fraction of strongly localized excitons (FSLE) for a number of InGaN/GaN quantum wells emitting from violet to green, as a function of temperature, and a number of wells grown under the same conditions is reported. The analysis is based on the Huang–Rhys parameters, obtained from different phonon replica intensities and measured using photoluminescence spectroscopy (PL). It is suggested that the FSLE is related to separately localized excitons rather than tightly localized excitons due to potential fluctuations, concluding that the overall exciton localization is a result of a competition between these two types of localization centres. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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