Sputter deposited p-NiO/n-SnO2 porous thin film heterojunction based NO2 sensor with high selectivity and fast response
| Autor: | S Kiruba Mangalam, Harish C. Barshilia, K Prajwal, Prasanta Chowdhury, Ann Susan Jose |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Bilayer Non-blocking I/O Metals and Alloys Pulsed DC Heterojunction 02 engineering and technology Sputter deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Sputtering Electrode Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film 0210 nano-technology business Instrumentation |
| Zdroj: | Sensors and Actuators B: Chemical. 310:127830 |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/j.snb.2020.127830 |
| Popis: | In this work, we report fabrication and characterization of porous, single layer n-SnO2, p-NiO and bilayer thin film heterojunction devices developed using pulsed DC magnetron sputtering for NO2 detection. Template-free, NiO/SnO2 heterojunction devices were deposited both in top-bottom and in-plane electrode configurations. All the devices showed an optimum sensing temperature of 200 °C. Systematic comparison of the fabricated devices revealed that the heterojunction devices with top-bottom electrodes improved performance. Electrical characterization confirmed the formation of heterojunction across the interface. The response values of the heterojunction sensor ranged from 57 to 144 % for the NO2 concentration range of 2–10 ppm. The heterojunction device showed high selectivity against CO and NH3 with selectivity coefficients of 90 and 26, respectively. The heterojunction sensor exhibited fast response and recovery times of 37 and 98 s, respectively. The device showed excellent stability with |
| Databáze: | OpenAIRE |
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