Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation

Autor:	Xuemei Wang, Larry Larsen, Wei-Kan Chu, Lin Shao, Joe Bennett, Jiarui Liu
Rok vydání:	2002
Předmět:	inorganic chemicals Materials science Silicon business.industry Annealing (metallurgy) Radiochemistry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Ion implantation Semiconductor Low energy chemistry Nuclear reaction analysis Electrical measurements business Boron
Zdroj:	Journal of Applied Physics. 92:4307-4311
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1505672
Popis:	Interactions between shallow implanted boron and high-energy silicon implants have been investigated. Athermal annealing of implantation damage induced by low energy boron implants at room temperature was observed after coimplantation and such annealing effects were more obvious when the dosage of preimplanted Si was increased. Electrical measurements after rapid thermal annealing showed that the activation of B was greatly increased with the dosages of high-energy Si coimplantation. An enhancement of substitutional ratio of B was observed by aligned nuclear reaction analysis.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::86a02195d32972dfa63c640f9d8024c7 https://doi.org/10.1063/1.1505672 Zobrazit plný text záznamu