In Situ Excimer Laser Irradiation of GaAs Surfaces During Schottky Barrier Formation*
| Autor: | P.A. Maki, D.J. Ehrlich |
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| Rok vydání: | 1987 |
| Zdroj: | Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates. |
| DOI: | 10.1364/msba.1987.ma3 |
| Popis: | Schottky barrier heights of all metals deposited on GaAs are largely controlled by the inherent Fermi level pinning at the surface which appears with even submonolayer coverages of metals or oxygen. The measured electrical characteristics of Schottky diodes will also depend upon the homogeneity of the surface at the time of metallization. Variations in the relative surface areas of oxides and clean surface will result in variations in apparent barrier height and diode ideality. |
| Databáze: | OpenAIRE |
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