Characterization of silicon photomultipliers and validation of the electrical model
| Autor: | Qiang Yi, Steve Ross, Kent C. Burr, P. Peng |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Physics
Nuclear and High Energy Physics 010308 nuclear & particles physics 010401 analytical chemistry Spice Photodetection 01 natural sciences 0104 chemical sciences law.invention Capacitor Silicon photomultiplier law 0103 physical sciences Electronic engineering Equivalent circuit Breakdown voltage Resistor Instrumentation Diode |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 887:144-149 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/j.nima.2018.01.059 |
| Popis: | This paper introduces a systematic way to measure most features of the silicon photomultipliers (SiPM). We implement an efficient two-laser procedure to measure the recovery time. Avalanche probability was found to play an important role in explaining the right behavior of the SiPM recovery process. Also, we demonstrate how equivalent circuit parameters measured by optical tests can be used in SPICE modeling to predict details of the time constants relevant to the pulse shape. The SiPM properties measured include breakdown voltage, gain, diode capacitor, quench resistor, quench capacitor, dark count rate, photodetection efficiency, cross-talk and after-pulsing probability, and recovery time. We apply these techniques on the SiPMs from two companies: Hamamatsu and SensL. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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