Electron‐state lifetimes in submicron diameter resonant tunneling diodes

Autor:	R. T. Syme, R. Newbury, W. M. Stobbs, Michael Kelly, G. A. C. Jones, V. J. Law, J. E. F. Frost, David A. Ritchie, M. Tewordt, Michael Pepper
Rok vydání:	1991
Předmět:	Physics and Astronomy (miscellaneous) Condensed matter physics Scattering Chemistry Tunnel diode Carrier lifetime Electron Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Molecular physics Quantum well Quantum tunnelling Diode
Zdroj:	Applied Physics Letters. 59:1966-1968
ISSN:	1077-3118 0003-6951
Popis:	We have investigated the lifetimes of electron states in the quantum wells of GaAs‐AlGaAs resonant tunneling diodes with diameters down to 200 nm, as a function of the barrier thickness. The times were extracted from the magnitude of steps observed in the current‐voltage characteristics, a quantum effect which reflects the quasi‐one‐dimensional electron transport in these devices. We find very good agreement between the experimental lifetimes, and those calculated using data from transmission electron microscopy. It is also shown that the total scattering time does not correlate with the barrier thickness and is much smaller than the electron‐state lifetime.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::868907abb41b9b3451dccbf692eb4202 https://doi.org/10.1063/1.106151 Zobrazit plný text záznamu