| Autor: |
Chrong Jung Lin, Hsing-Yi Liang, Hung-Tse Chen, Szu-I Hsieh, Ya-Chin King |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual. |
| DOI: |
10.1109/relphy.2007.369568 |
| Popis: |
Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size effectively. However, thin-film transistors made by SLS suffer reliability issues possibly due to the innate sub-grain boundaries parallel to the drain current direction as a result of the solidification process. In this study, we report the first-time observed channel-width- dependent degradation on these devices after hot carrier stress. A model was proposed and verified through the simulated sub-circuit characteristics, which successfully explains the degraded transistor behavior and its width dependence. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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