Influence of Fast Neutron Irradiation on the Electrical and Optical Properties of Li Doped ZnSnO Thin Film Transistor

Autor:	Byung-Hyuk Jun, In-Hwan Cho, Chan-Joong Kim
Rok vydání:	2020
Předmět:	Materials science Fermi level Doping technology industry and agriculture Analytical chemistry Electron Threshold voltage symbols.namesake X-ray photoelectron spectroscopy symbols General Materials Science Irradiation Thin film Saturation (magnetic)
Zdroj:	Korean Journal of Materials Research. 30:117-122
ISSN:	2287-7258 1225-0562
Popis:	The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (EF) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8670925be34983214a641a1745bcfa08 https://doi.org/10.3740/mrsk.2020.30.3.117 Zobrazit plný text záznamu