256 Mbit High Density CMOS Non Volatile Memories Field Isolation by Using High Temperature Poly Buffer LOCOS(HTPBL)

Autor: C. Leroux, F. Vinet, Georges Guegan, P. Spinelli, Simon Deleonibus, M. Heitzmann
Rok vydání: 1994
Předmět:
Zdroj: Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.1994.a-12-4
Databáze: OpenAIRE