150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
| Autor: | Yuuichi Takeuchi, Shoichiro Omae, Kazukuni Hara, Hiroaki Fujibayashi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
02 engineering and technology Epitaxy 01 natural sciences symbols.namesake chemistry.chemical_compound 0103 physical sciences MOSFET Silicon carbide Electronic engineering General Materials Science Wafer Growth rate 010302 applied physics business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials Trench symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Materials Science Forum. 897:43-46 |
| ISSN: | 1662-9752 |
| Popis: | In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm). |
| Databáze: | OpenAIRE |
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