Photoluminescence of MBE grown wurtzite Be-doped GaN
| Autor: | S. E. Hooper, D.E. Lacklison, Ian Harrison, A. V. Andrianov, G B Ren, J.W. Orton, Tin S. Cheng, C. T. Foxon, D J Dewsnip |
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| Rok vydání: | 1998 |
| Předmět: |
Quenching
Photoluminescence Materials science Phonon Doping Condensed Matter Physics Acceptor Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Materials Chemistry Electrical and Electronic Engineering Atomic physics Luminescence Molecular beam epitaxy Wurtzite crystal structure |
| Zdroj: | Semiconductor Science and Technology. 13:500-504 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | We report new lines in the photoluminescence (PL) spectrum of lightly Be-doped GaN. The low-temperature PL spectrum of the lightly doped sample is dominated by a transition at 3.385 eV with first and second LO phonon replicas. Power-resolved PL measurements showed that the peak at 3.385 eV narrowed in width and shifted to higher energies with increasing excitation intensity. Thus the transition is attributed to donor-to-acceptor recombination, involving a Be acceptor of optical ionization energy of between 90 and 100 meV. This is much shallower than the acceptor level of 250 meV induced by Mg doping. Increasing the doping, however, resulted in a quenching of the band-edge luminescence and the appearance of a broad transition centred around 2.4 eV which we assign to a complex involving Be. Undulations on the peak were consistent with interference effects. On increasing the doping level even further all luminescence was quenched. |
| Databáze: | OpenAIRE |
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