Synthesis and photovoltaic characteristic of n-type CdSe nanobelts
| Autor: | Lingzhi Du, Youan Lei |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Energy conversion efficiency Nanotechnology Heterojunction Chemical vapor deposition Photovoltaic effect Condensed Matter Physics Nanomaterials Semiconductor Mechanics of Materials Optoelectronics General Materials Science Field-effect transistor business Short circuit |
| Zdroj: | Materials Letters. 73:95-98 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2012.01.015 |
| Popis: | High quality n-type CdSe nanobelts (NBs) were synthesized via the chemical vapor deposition (CVD) method in a Cd-enriched atmosphere. CdSe NB field-effect transistors (FETs) and CdSe NB/p-Si heterojunction devices were fabricated and studied. The n-type conductivity of CdSe NBs was confirmed by nanoFETs based on individual NBs. The heterojunction devices were constructed with the n-type CdSe NBs and p-type bulk Si with 100 nm thickness SiO 2 . Typically, the heterojunction device exhibits an excellent rectifying behavior in the dark with a rectification ratio greater than 10 3 within ±3 V, and photovoltaic effect with an open-circuit photovoltage ( V OC ) of about 0.67 V, a short circuit current ( I SC ) of about 5.88 nA, and an energy conversion efficiency of 1.41%, and shows excellent environmental stability when placed in air for more than 3 months. This study demonstrates a convenient and low-cost method to construct CdSe NBs/Si heterojunction devices, which can be extended to the study of other semiconductor nanomaterials. It is expected that the heterojunction devices will have a great potential for future applications of optoelectronic integration. |
| Databáze: | OpenAIRE |
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