1.8 V Power Supply 16 Mb-MRAMs With 42.3% Array Efficiency

Autor:	Takeshi Kajiyama, Yoshiaki Asao, Ryousuke Takizawa, Makoto Nagamine, Masayoshi Iwayama, Shigeki Takahashi, Minoru Amano, Toshihiko Nagase, Tatsuya Kishi, Keiji Hosotani, Masahisa Yoshikawa, K. Itagaki, Eiji Kitagawa, Yuui Shimizu, Hisanori Aikawa, K. Tsuchida, T. Ueda, Masahiko Nakayama, Yoshihisa Iwata, Tadashi Kai, Sumio Ikegawa, Hiroaki Yoda, T. Inaba, Katsuya Nishiyama, Naoharu Shimomura, Yuji Ueda
Rok vydání:	2006
Předmět:	Magnetoresistive random-access memory Materials science business.industry Magnetic storage Magnetic tunnelling High density Electronic Optical and Magnetic Materials Power (physics) law.invention law Optoelectronics Electrical and Electronic Engineering Cmos process business
Zdroj:	IEEE Transactions on Magnetics. 42:2724-2726
ISSN:	1941-0069 0018-9464
DOI:	10.1109/tmag.2006.880081
Popis:	Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was designed, fabricated with 130 nm CMOS process and 240 nm back end MTJ process. As a result, a 1.8 V power supply MRAM with 42.3% array efficiency was successfully demonstrated
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8657934197cc0795d507f1cb66d3e5d3 https://doi.org/10.1109/tmag.2006.880081 Zobrazit plný text záznamu