Characterization of cooled large-area silicon avalanche photodiodes

Autor:	Jeffrey J. Fox, Nathan G. Woodard, Gregory P. Lafyatis
Rok vydání:	1999
Předmět:	Photomultiplier Materials science APDS Silicon business.industry Photoresistor Bolometer chemistry.chemical_element Photodetector Avalanche photodiode Photodiode law.invention chemistry law Optoelectronics business Instrumentation
Zdroj:	Review of Scientific Instruments. 70:1951-1956
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1149693
Popis:	We characterize the operation of large-area high-gain silicon avalanche photodiodes (APDs) at near liquid-nitrogen temperatures. The APDs that we studied have active areas of 64 mm2 and have gains of up to 20 000 at 85 K. We characterized the devices for both the usual, analog mode of operation and for doing single-photon pulse counting. The experimental results were found to be reasonably well described by the McIntyre theory. We independently measured k, the hole/electron ionization ratio—a key parameter in the McIntyre theory—and found it to be ∼6×10−4. Cooled, large-area, high-gain APDs compare favorably to photomultiplier tubes in applications that require high sensitivity at near-infrared wavelengths.
Databáze:	OpenAIRE
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