Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility
| Autor: | Yuting Chen, Zhaomeng Gao, Yuan Wang, Tiancheng Gong, Zhiwei Dang, Yan Wang, Shuxian Lv, Peng Yuan, Yang Yang, Pengfei Jiang, Yannan Xu, Yaxin Ding, Qing Luo |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Bend radius Condensed Matter Physics Ferroelectricity Atomic and Molecular Physics and Optics law.invention Atomic layer deposition Capacitor law Optoelectronics General Materials Science Electrical and Electronic Engineering Thin film business Polarization (electrochemistry) Layer (electronics) Polyimide |
| Zdroj: | Nano Research. 15:2913-2918 |
| ISSN: | 1998-0000 1998-0124 |
| Popis: | Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization (Pr) of 21 µC/cm2. Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices. |
| Databáze: | OpenAIRE |
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