Influence of Defects on Excess Charge Carrier Kinetics Studied by Transient PC and Transient PA

Autor:	H. Feist, M. Kunst, C. Swiatkowski
Rok vydání:	1997
Předmět:	Electron mobility Materials science Absorption spectroscopy Band gap business.industry Photoconductivity Kinetics Density of states Optoelectronics Charge carrier business Crystallographic defect Molecular physics
Zdroj:	MRS Proceedings. 467
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-467-203
Popis:	By comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and for state of the art a-Si:H films in two different states of light soaking. In both series the rising deep defect density leads to an enhancement of electron trapping rather than recombination via deep defects. The samples deposited at temperatures lower than 250°C additionally show a lower effective electron mobility, i.e. a broader conduction band tail.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::864385a0a80dbbd1703b66c9100d1ed7 https://doi.org/10.1557/proc-467-203 Zobrazit plný text záznamu Full text from SpringerLink