Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

Autor:	Gregor Pobegen, Clemens Ostermaier, Peter Lagger, Dionyz Pogany, Alexander Schiffmann
Rok vydání:	2013
Předmět:	Materials science business.industry Electrical engineering Ranging Bias stress Electronic Optical and Magnetic Materials Threshold voltage Stress (mechanics) Reliability (semiconductor) Optoelectronics Electrical and Electronic Engineering Oscilloscope business MISFET
Zdroj:	IEEE Electron Device Letters. 34:1112-1114
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2013.2272095
Popis:	The very fast dynamics of threshold voltage drift (ΔVth) of GaN-based metal-insulator-semiconductor-HEMTs induced by forward gate bias stress is investigated with a simple oscilloscope based setup. We show that the logarithmic recovery time dependence of ΔVth, previously found for recovery times ranging from 10 ms up to 1 ms, extend even to the μs regime. Further, we observed an accumulation of ΔVth because of repetitive stress pulses of 100 ns. Consequences for device operation and reliability are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::863e11d3cc665b12a5d0006771400ca0 https://doi.org/10.1109/led.2013.2272095 Zobrazit plný text záznamu