Compatibility of dual metal gate electrodes with high-k dielectrics for CMOS

Autor:	Veena Misra, You-Seok Suh, Jason Gurganus, Yanxia Lin, Jae-Hoon Lee, Rashmi Jha, H. Lazar
Rok vydání:	2004
Předmět:	Materials science Annealing (metallurgy) business.industry Alloy Compatibility (geochemistry) Dielectric engineering.material Metal CMOS visual_art visual_art.visual_art_medium engineering Electronic engineering Optoelectronics Work function business High-κ dielectric
Zdroj:	IEEE International Electron Devices Meeting 2003.
DOI:	10.1109/iedm.2003.1269290
Popis:	Dual metal electrodes such as Ru, Ru-Ta alloy, TaN and TaSiN were investigated on low EOT single layer HfO/sub 2/ and stacked HfO/sub 2//SiO/sub 2/ gate dielectrics. It was found that the work function values of metal gates on HfO/sub 2/ and on SiO/sub 2/ are similar. Thermal anneal studies of selected metals on the above dielectrics were also performed to evaluate the change in EOT and V/sub FB/ values.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::863b6d703ce53f098ea897435ec884db https://doi.org/10.1109/iedm.2003.1269290 Zobrazit plný text záznamu