Loading Effect in the Channel Etching Process of Crystalline In-Ga-Zn-Oxide FETs

Autor:	E. Takahashi, R. Hodo, S. Ito, K. Fukushima, K. Tochibayashi, S. Sasagawa, Y. Komatsu, R. Arasawa, S. Yamazaki
Rok vydání:	2018
Předmět:	chemistry.chemical_compound Materials science chemistry business.industry Etching (microfabrication) Scientific method Oxide Optoelectronics business Communication channel
Zdroj:	Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2018.ps-10-02
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::862932bb7a5d52ca2afb3928ec33493d https://doi.org/10.7567/ssdm.2018.ps-10-02 Zobrazit plný text záznamu