Tunneling states in neutron-disordered bulk silicon
| Autor: | Christiane Laermans, M. Coeck |
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| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Physical Review B. 58:6708-6711 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.58.6708 |
| Popis: | Measurements of the variation of the low-temperature (LT) ultrasonic velocity and Raman scattering spectroscopy were performed on pure, bulk single-crystalline silicon, both unirradiated and irradiated with fast-neutron doses up to 1.7 and $3.2\ifmmode\times\else\texttimes\fi{}{10}^{21} {\mathrm{n}/\mathrm{c}\mathrm{m}}^{2} (Eg0.1 \mathrm{MeV}).$ This irradiation is found to transform the crystalline silicon structure into a partly disordered state. Previous LT studies on amorphous and partly disordered low-coordinated solids show the presence of low-energy excitations, which can be described as quantum mechanical tunneling states (TS's). The possible ``glassy'' behavior of highly coordinated solids, is, however, still under discussion. Our observations indicate the presence of TS in neutron-irradiated bulk silicon. This result makes it possible to study TS in highly coordinated bulk solids. |
| Databáze: | OpenAIRE |
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