Analysis of hot carrier effects in a 0.35μm high voltage n-channel LDMOS transistor
| Autor: | Hubert Enichlmair, Jong Mun Park, Sara Carniello, Rainer Minixhofer |
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| Rok vydání: | 2007 |
| Předmět: |
LDMOS
Range (particle radiation) Materials science business.industry Transistor Electrical engineering High voltage Electron Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Phenomenological model Optoelectronics Degradation (geology) Electrical and Electronic Engineering Safety Risk Reliability and Quality business Voltage |
| Zdroj: | Microelectronics Reliability. 47:1439-1443 |
| ISSN: | 0026-2714 |
| Popis: | This paper presents the results of hot carrier stress experiments of a high voltage 0.35 μm n-channel lateral DMOS transistor. The stress induced degradation was investigated at different ambient temperatures over a wide range of both gate- and drain-stress voltages. In order to explain the observed device degradation under these stress conditions, the combined influence of hole- and electron induced degradation have to be taken into account. A physical explanation of the observed effects is provided and a phenomenological degradation model is suggested. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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