Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer
| Autor: | Philip Barletta, Geza Dezsi, Gary E. Bulman, Rama Venkatasubramanian |
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| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Materials science business.industry Superlattice Metals and Alloys Surfaces and Interfaces Chemical vapor deposition Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Gallium antimonide chemistry.chemical_compound chemistry Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Indium arsenide business Layer (electronics) |
| Zdroj: | Thin Solid Films. 520:2170-2172 |
| ISSN: | 0040-6090 |
| Popis: | InAs/GaSb type II superlattices (T2SLs) were grown heteroepitaxially, via metallorganic chemical vapor deposition (MOCVD), on GaAs substrates. The 7% lattice mismatch between the T2SL and GaAs substrate was accommodated through the use of a two-step InAs buffer layer. The periodicity of the grown structures was confirmed by X-ray diffraction (XRD). FTIR measurements of the structures yielded cutoff wavelength values from 4.9 μm to 8.7 μm, which, as expected, scaled with thickness of the InAs in the SL structure. Kronig–Penny modeling of the structures produced the general trend of the experimental data. |
| Databáze: | OpenAIRE |
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