Mimicking optoelectronic synaptic functions in solution-processed In–Ga–Zn–O phototransistors
| Autor: | Wanrong Liu, Chenxing Jin, Jia Sun, Weijie Qiu, Yulong Huang, Waleed Alquraishi, Yongli Gao |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Postsynaptic Current 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Solution processed Photodiode law.invention Neuromorphic engineering law 0103 physical sciences Excitatory postsynaptic potential Optoelectronics General Materials Science Thin film 0210 nano-technology business Dark current |
| Zdroj: | Applied Physics A. 126 |
| ISSN: | 1432-0630 0947-8396 |
| Popis: | Neuromorphic devices play an important role in neuromorphic systems. Stimulating synaptic phototransistors with light spike paves a new method for manufacturing artificial synapses. In this paper, a synaptic In–Ga–Zn–O phototransistor was fabricated, and the photoresponsivity of the device could be tuned by adjusting the annealing temperature of a solution-processed In–Ga–Zn–O thin film. The photoresponsivity and photocurrent-to-the dark current ratio for the In–Ga–Zn–O phototransistors fabricated at various annealing temperatures were analyzed. More importantly, some basic functions of synaptic phototransistors that exhibit excitatory postsynaptic current, short-term plasticity, paired-pulse facilitation, and multi-level photomemory are demonstrated. The results from this study may help others produce synaptic phototransistors for neuromorphic computing. |
| Databáze: | OpenAIRE |
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