Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
| Autor: | E. G. Tishkovskii, V. I. Obodnikov, B. I. Fomin, A. M. Myasnikov, E. I. Cherepov, V. G. Seryapin |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Silicon Physics::Medical Physics chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Condensed Matter::Materials Science Ion implantation chemistry Impurity Condensed Matter::Superconductivity Physics::Atomic and Molecular Clusters Condensed Matter::Strongly Correlated Electrons Irradiation Quasi periodic Atomic physics Boron |
| Zdroj: | Semiconductors. 31:279-282 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187127 |
| Popis: | The temperature range in which oscillating impurity distributions are formed in heavily boron-doped silicon irradiated with boron ions B+ is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more efficiently in the region of the maximum of the implanted impurity distribution and at the boundaries of the ion irradiation region. |
| Databáze: | OpenAIRE |
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