100 μm-Cavity GaN-Based Edge Emitting Laser Diodes by the Automatic Cleavage Technique Using GaN-on-Si Epitaxial Lateral Overgrowth
| Autor: | Yoshinobu Kawaguchi, Kentaro Murakawa, Motohisa Usagawa, Yuuta Aoki, Kazuma Takeuchi, Takeshi Kamikawa |
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| Rok vydání: | 2023 |
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| Zdroj: | Crystal Growth & Design. 23:3572-3578 |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/acs.cgd.3c00070 |
| Databáze: | OpenAIRE |
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