Fabrication of AlInN/AlN/GaInN/GaN heterostructure field‐effect transistors

Autor:	Yasuhiro Isobe, Isamu Akasaki, Satoshi Kamiyama, Motoaki Iwaya, Hiromichi Ikki, Kazuya Ikeda, Tatsuyuki Sakakibara, Hiroshi Amano, Tetsuya Takeuchi
Rok vydání:	2011
Předmět:	Materials science Fabrication law business.industry Transistor Optoelectronics Heterojunction Electron Condensed Matter Physics business Heterostructure field effect transistors Layer (electronics) law.invention
Zdroj:	physica status solidi c. 9:942-944
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201100492
Popis:	We report on the electrical properties of AlInN/GaInN heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6. The Al0.82In0.18N/AlN/Ga0.4In0.6N/GaN heterostructure field-effect transistors exhibited static characteristics. The maximum drain-source current reached a value of 0.26 A/mm (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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