Development of Integrated Thermoelectric Sensors for Power Components

Autor:	P. Faucherand, R. Escoffier, M. Plissonnier, G. Savelli, C. Bryan
Rok vydání:	2023
Předmět:	Fabrication Materials science business.industry Tension (physics) Transistor Heterojunction law.invention Power (physics) Planar law Thermoelectric effect Optoelectronics Electrical and Electronic Engineering business Fermi gas Instrumentation
Zdroj:	IEEE Sensors Journal. 23:8162-8168
ISSN:	2379-9153 1530-437X
DOI:	10.1109/jsen.2021.3107772
Popis:	Power components such as High Electron Mobility Transistors (HEMTs) are used for high power and high frequency applications. These tend to overheat and destroy their packaging and connections to the wire bondings. This paper presents planar micro-thermoelectric sensors (μTESs) developed to measure partial heat flow dissipated by the HEMTs to avoid the HEMTs from reaching critical temperatures. These sensors use the same active materials as well as the same fabrication process as the HEMTs, enabling them to be fabricated simultaneously for a simple integration. The HEMTs’ active layers consist in AlGaN/GaN heterostructures resulting in the formation of a 2D Electron Gas (2DEG) at the interface. Tension factors of 47 mV/(K.mm2) were obtained with these sensors and heat flows of 0.2 W to 7 W were measured.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::86006c87ac5b3a551242f14586fd7051 https://doi.org/10.1109/jsen.2021.3107772 Zobrazit plný text záznamu