Special Features of Structural Interaction in (AlGaIn)N∕GaN Heterostructures Used as Dislocation Filters

Autor:	Evgenii Zavarin, Andrey Tsatsulnikov, Wsevolod Lundin
Rok vydání:	2005
Předmět:	Threading dislocations Condensed Matter::Materials Science Crystallography Materials science Condensed matter physics Heterojunction Dislocation Condensed Matter Physics Intermediate composition Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 39:100
ISSN:	1063-7826
Popis:	The behavior of threading dislocations in AlGaN and InGaN layers incorporated into GaN-based heterostructures is studied. It is shown that InGaN layers with an intermediate composition can be used as the most effective dislocation filters. Estimations of the stresses generated by dislocations and nanodomains show good agreement between the theory and experiment.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::85fe4b41298cfca459ecbee9f152e05a https://doi.org/10.1134/1.1852655 Zobrazit plný text záznamu Plný text ve formátu PDF